GAN039-650NTB is a 650 V, 33 mOhm Gallium Nitride (GaN) FET

The GAN039-650NTB is a 650 V, 33 mΩ Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

Features & benefits

  • Simplified driver design as standard level MOSFET gate drivers can be used:
    • 0 V to 12 V drive voltage
    • Gate threshold voltage VGSth of 4 V
  • Robust gate oxide with ±20 V VGS rating
  • High gate threshold voltage of 4 V for gate bounce immunity
  • Low body diode Vf for reduced losses and simplified dead-time adjustments
  • Transient over-voltage capability for increased robustness
  • CCPAK package technology:
    • Improved reliability, with reduced Rth(j-mb) for optimal cooling
    • Lower inductances for lower switching losses and EMI
    • 175 °C maximum junction temperature
    • High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages
    • Visual (AOI) soldering inspection, no need for expensive x-ray equipment
    • Easy solder wetting for good mechanical solder joints


  • Hard and soft-switching converters for industrial and datacom power
  • Bridgeless totempole PFC
  • PV and UPS inverters
  • Servo motor drives

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