The devices in this series control the applied gate voltage independent of the input voltage and feature an over-voltage lockout function to protect the circuit.
The new products are now joining the TCK421G, announced earlier this year. Products in the series can be selected for a gate-source voltage of 10V or 5.6V, allowing use with a wide variety of MOSFETs. A choice of detection voltages for the input over-voltage lockout allows them to operate from power lines from 5V to 24V. The drivers available are the TCK420G for 24V power lines, TCK422G and TCK423G for 12V, TCK424G for 9V, and TCK425G for 5V.
Each new driver in the series features a built-in charge pump that ensures a stable gate-source voltage at the external MOSFET while the input can vary from 2.7V to 28V. This allows large currents to be switched. In addition, when used to control two N-channel MOSFETs connected back-to-back, they are suitable for configuring load-switch or power-multiplexer circuits with reverse-current blocking.
Housed in a 1.2mm x 0.8mm WCSP6G package, one of the smallest in the industry, Toshiba’s TCK42xG gate drivers have a tiny footprint that allows high-density mounting in space-constrained portable products. They also have a low input OFF current, IQ (OFF), of 0.5μA (maximum, at VIN=5V) that helps to prolong battery runtime.
To further assist customers’ projects, Toshiba has developed the Power Multiplexer Circuit Reference Design, which provides a design example for power multiplexers that utilize the functions of TCK42xG. The reference design is available from the following link: https://toshiba.semicon-storage.com/eu/semiconductor/design-development/referencedesign/articles/power-multiplexer-circuit_powermanagement_rd221.html.
Further information about these new MOSFET gate driver ICs can be found here: https://toshiba.semicon-storage.com/eu/semiconductor/product/power-management-ics/mosfet-gate-driver-ics/articles/mosfet-gate-driver-ic-overview.html.